 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| BF1208 Dual N-channel dual gate MOSFET Rev. 01 -- 16 March 2005 Product data sheet 1. Product profile 1.1 General description The BF1208 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The integrated switch is operated by the gate1 bias of amplifier B. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during Automatic Gain Control (AGC). Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor has a SOT666 micro-miniature plastic package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. MSC895 1.2 Features s Two low noise gain controlled amplifiers in a single package. One with a fully integrated bias and one with a partly integrated bias s Internal switch to save external components s Superior cross-modulation performance during AGC s High forward transfer admittance s High forward transfer admittance to input capacitance ratio 1.3 Applications s Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply voltage x digital and analog television tuners x professional communication equipment Philips Semiconductors BF1208 Dual N-channel dual gate MOSFET 1.4 Quick reference data Table 1: Quick reference data Per MOSFET unless otherwise specified. Symbol Parameter VDS ID Ptot |yfs| drain-source voltage (DC) drain current (DC) total power dissipation forward transfer admittance Tsp 109 C f = 1 MHz amplifier A; ID = 19 mA amplifier B; ID = 13 mA Ciss(G1) input capacitance at gate1 f = 1 MHz amplifier A amplifier B Crss NF Xmod reverse transfer capacitance f = 1 MHz noise figure cross-modulation amplifier A; f = 400 MHz amplifier B; f = 800 MHz input level for k = 1 % at 40 dB AGC amplifier A amplifier B Tj [1] [1] Conditions Min 26 28 - Typ 31 33 2.2 2.0 20 1.3 1.4 Max Unit 6 30 180 41 43 2.7 2.5 1.9 2.1 V mA mW mS mS pF pF fF dB dB 100 100 - 105 103 - 150 dBV dBV C junction temperature Tsp is the temperature at the soldering point of the source lead. 2. Pinning information Table 2: Pin 1 2 3 4 5 6 Discrete pinning Description gate1 (AMP A) gate2 gate1 (AMP B) drain (AMP B) source drain (AMP A) 1 2 3 G2 S 6 5 4 AMP A G1A DA Simplified outline Symbol G1B AMP B sym089 DB 9397 750 14254 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 16 March 2005 2 of 22 Philips Semiconductors BF1208 Dual N-channel dual gate MOSFET 3. Ordering information Table 3: Ordering information Package Name BF1208 Description plastic surface mounted package; 6 leads Version SOT666 Type number 4. Marking Table 4: BF1208 Marking codes Marking code 2L Type number 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS ID IG1 IG2 Ptot Tstg Tj [1] Parameter drain-source voltage (DC) drain current (DC) gate1 current gate2 current total power dissipation storage temperature junction temperature Conditions Min - Max 6 30 10 10 180 +150 150 Unit V mA mA mA mW C C Per MOSFET Tsp 109 C [1] -65 - Tsp is the temperature at the soldering point of the source lead. 250 Ptot (mW) 200 001aac193 150 100 50 0 0 50 100 150 Tsp (C) 200 Fig 1. Power derating curve 9397 750 14254 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 16 March 2005 3 of 22 Philips Semiconductors BF1208 Dual N-channel dual gate MOSFET 6. Thermal characteristics Table 6: Symbol Rth(j-sp) Thermal characteristics Parameter thermal resistance from junction to solder point Conditions Typ 225 Unit K/W 7. Static characteristics Table 7: Static characteristics Tj = 25 C; unless otherwise specified. Symbol V(BR)DSS Parameter drain-source breakdown voltage Conditions VG1-S = VG2-S = 0 V; ID = 10 A amplifier A amplifier B V(BR)G1-SS V(BR)G2-SS VF(S-G1) VF(S-G2) VG1-S(th) VG2-S(th) IDSX gate1-source breakdown voltage gate2-source breakdown voltage forward source-gate1 voltage forward source-gate2 voltage gate1-source threshold voltage gate2-source threshold voltage drain-source current VG2-S = VDS = 0 V; IG1-S = 10 mA VG1-S = VDS = 0 V; IG2-S = 10 mA VG2-S = VDS = 0 V; IS-G1 = 10 mA VG1-S = VDS = 0 V; IS-G2 = 10 mA VDS = 5 V; VG2-S = 4 V; ID = 100 A VDS = 5 V; VG1-S = 5 V; ID = 100 A VG2-S = 4 V; VDS(B) = 5 V; RG1 = 150 k amplifier A; VDS(A) = 5 V amplifier B; VDS(B) = 5 V IG1-S gate1 cut-off current VG2-S = VDS(A) = 0 V amplifier A; VG1-S(A) = 5 V; ID(B) = 0 A amplifier B; VG1-S(B) = 5 V; VDS(B) = 0 V IG2-S gate2 cut-off current VG2-S = 4 V; VG1-S(B) = 0 V; VG1-S(A) = VDS(A) = VDS(B) = 0 V 50 50 20 nA nA nA [1] [2] Min Typ Max Unit Per MOSFET; unless otherwise specified 6 6 6 6 0.5 0.5 0.3 0.4 14 9 10 10 1.5 1.5 1.0 1.0 24 17 V V V V V V V V mA mA [1] [2] RG1 connects gate1 (B) to VGG = 0 V (see Figure 3). RG1 connects gate1 (B) to VGG = 5 V (see Figure 3). 9397 750 14254 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 16 March 2005 4 of 22 Philips Semiconductors BF1208 Dual N-channel dual gate MOSFET 20 ID (mA) 16 001aaa552 (1) G1A DA 12 (2) G2 (3) S 8 (4) G1B RG1 VGG (6) (5) DB 4 001aac205 0 0 1 2 3 4 VGG (V) 5 (1) ID(B); RG1 = 120 k. (2) ID(B); RG1 = 150 k. (3) ID(B); RG1 = 180 k. (4) ID(A); RG1 = 180 k. (5) ID(A); RG1 = 150 k. (6) ID(A); RG1 = 120 k. VGG = 5 V: amplifier A is off; amplifier B is on. VGG = 0 V: amplifier A is on; amplifier B is off. Fig 2. Drain currents of MOSFET A and B as a function of gate1 supply voltage Fig 3. Functional diagram 8. Dynamic characteristics 8.1 Dynamic characteristics for amplifier A Table 8: Dynamic characteristics for amplifier A [1] Common source; Tamb = 25 C; VG2-S = 4 V; VDS = 5 V; ID = 19 mA; unless otherwise specified. Symbol |yfs| Ciss(G1) Ciss(G2) Coss Crss Gtr Parameter forward transfer admittance input capacitance at gate1 input capacitance at gate2 output capacitance reverse transfer capacitance power gain Conditions Tj = 25 C f = 1 MHz f = 1 MHz f = 1 MHz f = 1 MHz BS = BS(opt); BL = BL(opt) f = 200 MHz; GS = 2 mS; GL = 0.5 mS f = 400 MHz; GS = 2 mS; GL = 1 mS f = 800 MHz; GS = 3.3 mS; GL = 1 mS NF noise figure f = 11 MHz; GS = 20 mS; BS = 0 S f = 400 MHz; YS = YS(opt) f = 800 MHz; YS = YS(opt) 32 28 23 36 32 27 3.0 1.3 1.4 40 36 32 1.9 2.1 dB dB dB dB dB dB Min 26 Typ 31 2.2 3.0 0.9 20 Max 41 2.7 Unit mS pF pF pF fF 9397 750 14254 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 16 March 2005 5 of 22 Philips Semiconductors BF1208 Dual N-channel dual gate MOSFET Table 8: Dynamic characteristics for amplifier A [1] ...continued Common source; Tamb = 25 C; VG2-S = 4 V; VDS = 5 V; ID = 19 mA; unless otherwise specified. Symbol Xmod Parameter cross-modulation Conditions input level for k = 1 %; fw = 50 MHz; funw = 60 MHz at 0 dB AGC at 10 dB AGC at 20 dB AGC at 40 dB AGC [1] [2] For the MOSFET not in use: VG1-S(B) = 0 V; VDS(B) = 0 V. Measured in Figure 33 test circuit. [2] Min Typ Max Unit 90 100 90 99 105 - dBV dBV dBV dBV 8.1.1 Graphics for amplifier A 001aaa554 (1) 30 ID (mA) 20 (2) (3) 32 ID (mA) 001aaa555 (1) (2) (4) 24 (3) (4) (5) 16 (5) (6) 10 (6) (7) 8 (7) (8) (9) 0 0 0.4 0.8 1.2 1.6 2 VG1-S (V) 0 0 2 4 VDS (V) 6 (1) VG2-S = 4 V. (2) VG2-S = 3.5 V. (3) VG2-S = 3 V. (4) VG2-S = 2.5 V. (5) VG2-S = 2 V. (6) VG2-S = 1.5 V. (7) VG2-S = 1 V. VDS(A) = 5 V; VG1-S(B) = VDS(B) = 0 V; Tj = 25 C. (1) VG1-S(A) = 1.8 V. (2) VG1-S(A) = 1.7 V. (3) VG1-S(A) = 1.6 V. (4) VG1-S(A) = 1.5 V. (5) VG1-S(A) = 1.4 V. (6) VG1-S(A) = 1.3 V. (7) VG1-S(A) = 1.2 V. (8) VG1-S(A) = 1.1 V. (9) VG1-S(A) = 1 V. VG2-S = 4 V; VG1-S(B) = VDS(B) = 0 V; Tj = 25 C. Fig 4. Amplifier A: transfer characteristics; typical values Fig 5. Amplifier A: output characteristics; typical values 9397 750 14254 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 16 March 2005 6 of 22 Philips Semiconductors BF1208 Dual N-channel dual gate MOSFET 40 yfs (mS) 30 001aaa556 20 ID(A) (mA) 16 001aac206 (1) (2) 12 20 (3) 8 (4) 10 4 (5) (6) 0 0 8 16 24 ID (mA) 32 0 0 20 40 ID(B) (A) 60 (1) VG2-S = 4 V. (2) VG2-S = 3.5 V. (3) VG2-S = 3 V. (4) VG2-S = 2.5 V. (5) VG2-S = 2 V. (6) VG2-S = 1.5 V. VDS(A) = 5 V; VG1-S(B) = VDS(B) = 0 V; Tj = 25 C. VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = 5 V; VG1-S(B) = 0 V; Tj = 25 C. ID(B) = internal G1 current = current in pin drain (B) if MOSFET (B) is switched off. Fig 6. Amplifier A: forward transfer admittance as a function of drain current; typical values Fig 7. Amplifier A: drain current as a function of internal G1 current; typical values 9397 750 14254 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 16 March 2005 7 of 22 Philips Semiconductors BF1208 Dual N-channel dual gate MOSFET 20 ID (mA) 16 001aaa558 32 ID (mA) 24 001aaa559 (1) 12 16 8 (2) (3) (4) (5) (6) 8 4 0 0 1 2 3 4 5 Vsupply (V) 0 0 2 4 VG2-S (V) 6 VDS(A) = VDS(B) = Vsupply; VG2-S = 4 V; Tj = 25 C; RG1 = 150 k (connected to ground); see Figure 3. (1) VDS(B) = 5 V. (2) VDS(B) = 4.5 V. (3) VDS(B) = 4 V. (4) VDS(B) = 3.5 V. (5) VDS(B) = 3 V. (6) VDS(B) = 2.5 V. VDS(A) = 5 V; VG1-S(B) = 0 V; gate1 (A) = open; Tj = 25 C. Fig 8. Amplifier A: drain current of amplifier A as a function of supply voltage of A and B amplifier; typical values 120 Vunw (dBV) 110 001aac195 Fig 9. Amplifier A: drain current as a function of gate2 voltage; typical values 0 gain reduction (dB) 10 001aac196 20 100 30 90 40 80 0 10 20 30 40 50 gain reduction (dB) 50 0 1 2 3 VAGC (V) 4 VDS(A) = VDS(B) = 5 V; VG1-S(B) = 0 V; fw = 50 MHz; funw = 60 MHz; Tamb = 25 C; see Figure 33. VDS(A) = VDS(B) = 5 V; VG1-S(B) = 0 V; f = 50 MHz; see Figure 33. Fig 10. Amplifier A: unwanted voltage for 1 % cross-modulation as a function of gain reduction; typical values Fig 11. Amplifier A: gain reduction as a function of AGC voltage; typical values 9397 750 14254 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 16 March 2005 8 of 22 Philips Semiconductors BF1208 Dual N-channel dual gate MOSFET 28 ID (mA) 20 001aac197 102 bis, gis (mS) 10 bis 1 001aac566 12 10-1 gis 4 0 10 20 30 40 50 gain reduction (dB) 10-2 10 102 f (MHz) 103 VDS(A) = VDS(B) = 5 V; VG1-S(B) = 0 V; f = 50 MHz; Tamb = 25 C; see Figure 33. VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = VG1-S(B) = 0 V; ID(A) = 19 mA Fig 12. Amplifier A: drain current as a function of gain reduction; typical values 102 001aac567 Fig 13. Amplifier A: input admittance as a function of frequency; typical values 103 |yrs| (S) 102 rs 001aac568 -102 -103 rs (deg) -102 |yfs| (mS) |yfs| fs (deg) 10 fs -10 |yrs| 10 -10 1 10 102 f (MHz) -1 103 1 10 102 f (MHz) 103 -1 VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = VG1-S(B) = 0 V; ID(A) = 19 mA VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = VG1-S(B) = 0 V; ID(A) = 19 mA Fig 14. Amplifier A: forward transfer admittance and phase as a function of frequency; typical values Fig 15. Amplifier A: reverse transfer admittance and phase as a function of frequency; typical values 9397 750 14254 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 16 March 2005 9 of 22 Philips Semiconductors BF1208 Dual N-channel dual gate MOSFET 10 bos, gos (mS) 1 bos 001aac569 10-1 gos 10-2 10 102 f (MHz) 103 VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = VG1-S(B) = 0 V; ID(A) = 19 mA Fig 16. Amplifier A: output admittance as a function of frequency; typical values 8.1.2 Scattering parameters for amplifier A Table 9: Scattering parameters for amplifier A VDS(A) = 5 V; VG2-S = 4 V; ID(A) = 19 mA; VDS(B) = 0 V; VG1-S(B) = 0 V; Tamb = 25 C; typical values. f (MHz) 50 100 200 300 400 500 600 700 800 900 1000 s11 Magnitude (ratio) 0.991 0.990 0.986 0.980 0.970 0.960 0.948 0.935 0.921 0.908 0.894 Angle (deg) -3.86 -7.73 s21 Magnitude (ratio) 3.08 3.03 Angle (deg) s12 Magnitude (ratio) Angle (deg) 77.41 78.10 78.39 73.53 68.74 63.64 59.62 55.09 50.79 46.62 42.78 s22 Magnitude (ratio) 0.992 0.991 0.990 0.989 0.986 0.983 0.980 0.977 0.973 0.970 0.967 Angle (deg) -1.41 -2.81 -5.57 -8.34 -11.08 -13.78 -16.45 -19.10 -21.69 -24.28 -26.87 175.91 0.0009 171.76 0.0019 163.68 0.0037 155.54 0.0054 147.55 0.0070 139.76 0.0085 132.16 0.0098 124.70 0.0110 117.39 0.0120 110.20 0.0128 103.31 0.0135 -15.43 2.99 -22.98 2.94 -30.44 2.89 -37.60 2.82 -44.62 2.75 -51.44 2.67 -58.04 2.58 -64.41 2.50 -70.49 2.40 8.1.3 Noise data for amplifier A Table 10: Noise data for amplifier A VDS(A) = 5 V; VG2-S = 4 V; ID(A) = 19 mA; VDS(B) = 0 V; VG1-S(B) = 0 V; Tamb = 25 C; typical values; unless otherwise specified. f (MHz) 400 800 9397 750 14254 NFmin (dB) 1.3 1.4 opt ratio 0.718 0.677 (deg) 16.06 37.59 rn () 0.683 0.681 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 16 March 2005 10 of 22 Philips Semiconductors BF1208 Dual N-channel dual gate MOSFET 8.2 Dynamic characteristics for amplifier B Table 11: Dynamic characteristics for amplifier B [1] Common source; Tamb = 25 C; VG2-S = 4 V; VDS = 5 V; ID = 13 mA; unless otherwise specified. Symbol Parameter |yfs| Ciss(G1) Ciss(G2) Coss Crss Gtr forward transfer admittance input capacitance at gate1 input capacitance at gate2 output capacitance reverse transfer capacitance power gain Conditions Tj = 25 C f = 1 MHz f = 1 MHz f = 1 MHz f = 1 MHz BS = BS(opt); BL = BL(opt) f = 200 MHz; GS = 2 mS; GL = 0.5 mS f = 400 MHz; GS = 2 mS; GL = 1 mS f = 800 MHz; GS = 3.3 mS; GL = 1 mS NF noise figure f = 11 MHz; GS = 20 mS; BS = 0 S f = 400 MHz; YS = YS(opt) f = 800 MHz; YS = YS(opt) Xmod cross-modulation input level for k = 1 %; fw = 50 MHz; funw = 60 MHz at 0 dB AGC at 10 dB AGC at 20 dB AGC at 40 dB AGC [1] [2] For the MOSFET not in use: VG1-S(A) = 0 V; VDS(A) = 0 V. Measured in Figure 34 test circuit. [2] Min 28 33 30 29 90 100 Typ 33 2.0 3.4 0.85 20 37 34 33 5 1.3 1.4 88 94 103 Max Unit 43 2.5 41 38 37 1.9 2.1 mS pF pF pF fF dB dB dB dB dB dB dBV dBV dBV dBV 9397 750 14254 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 16 March 2005 11 of 22 Philips Semiconductors BF1208 Dual N-channel dual gate MOSFET 8.2.1 Graphics for amplifier B 001aaa568 (1) (4) (2) (3) 30 ID (mA) 20 32 ID (mA) 24 001aaa569 (1) (2) (3) (5) 16 (6) (4) (5) (6) 10 8 (7) (7) 0 0 0.4 0.8 1.2 1.6 2 VG1-S (V) 0 0 2 4 VDS (V) 6 (1) VG2-S = 4 V. (2) VG2-S = 3.5 V. (3) VG2-S = 3 V. (4) VG2-S = 2.5 V. (5) VG2-S = 2 V. (6) VG2-S = 1.5 V. (7) VG2-S = 1 V. VDS(B) = 5 V; VDS(A) = VG1-S(A) = 0 V; Tj = 25 C. (1) VG1-S(B) = 1.6 V. (2) VG1-S(B) = 1.5 V. (3) VG1-S(B) = 1.4 V. (4) VG1-S(B) = 1.3 V. (5) VG1-S(B) = 1.2 V. (6) VG1-S(B) = 1.1 V. (7) VG1-S(B) = 1 V. VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V; Tj = 25 C. Fig 17. Amplifier B: transfer characteristics; typical values Fig 18. Amplifier B: output characteristics; typical values 9397 750 14254 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 16 March 2005 12 of 22 Philips Semiconductors BF1208 Dual N-channel dual gate MOSFET 100 IG1 (A) 80 001aaa570 (1) (2) 40 yfs (mS) 30 001aaa571 (1) (2) (3) (3) (4) (4) 60 20 40 (5) (5) 10 20 (6) (6) (7) (7) 0 0 0.4 0.8 1.2 1.6 2 VG1-S (V) 0 0 8 16 24 ID (mA) 32 (1) VG2-S = 4 V. (2) VG2-S = 3.5 V. (3) VG2-S = 3 V. (4) VG2-S = 2.5 V. (5) VG2-S = 2 V. (6) VG2-S = 1.5 V. (7) VG2-S = 1 V. VDS(B) = 5 V; VDS(A) = VG1-S(A) = 0 V; Tj = 25 C. (1) VG2-S = 4 V. (2) VG2-S = 3.5 V. (3) VG2-S = 3 V. (4) VG2-S = 2.5 V. (5) VG2-S = 2 V. (6) VG2-S = 1.5 V. (7) VG2-S = 1 V. VDS(B) = 5 V; VDS(A) = VG1-S(A) = 0 V; Tj = 25 C. Fig 19. Amplifier B: gate1 current as a function of gate1 voltage; typical values 24 ID (mA) 16 001aaa572 Fig 20. Amplifier B: forward transfer admittance as a function of drain current; typical values 001aaa573 16 ID (mA) 12 8 8 4 0 0 10 20 30 40 50 IG1 (A) 0 0 1 2 3 4 VGG (V) 5 VDS(B) = 5 V; VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V; Tj = 25 C. VDS(B) = 5 V; VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V; Tj = 25 C; RG1 = 150 k (connected to VGG); see Figure 3. Fig 21. Amplifier B: drain current as a function of gate1 current; typical values Fig 22. Amplifier B: drain current as a function of gate1 supply voltage; typical values 9397 750 14254 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 16 March 2005 13 of 22 Philips Semiconductors BF1208 Dual N-channel dual gate MOSFET 24 ID (mA) 16 001aaa574 16 ID (mA) 12 001aaa575 (1) (1) (2) (3) (4) (5) (6) (7) (8) (2) (3) (4) (5) 8 8 4 0 0 2 4 VGG = VDS (V) 6 0 0 2 4 VG2-S (V) 6 (1) RG1 = 68 k. (2) RG1 = 82 k. (3) RG1 = 100 k. (4) RG1 = 120 k. (5) RG1 = 150 k. (6) RG1 = 180 k. (7) RG1 = 220 k. (8) RG1 = 270 k. VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V; Tj = 25 C; RG1 is connected to VGG; see Figure 3. (1) VGG = 5.0 V. (2) VGG = 4.5 V. (3) VGG = 4.0 V. (4) VGG = 3.5 V. (5) VGG = 3.0 V. VDS(B) = 5 V; VDS(A) = VG1-S(A) = 0 V; Tj = 25 C; RG1 = 150 k (connected to VGG); see Figure 3. Fig 23. Amplifier B: drain current as a function of gate1 supply voltage and drain supply voltage; typical values Fig 24. Amplifier B: drain current as a function of gate2 voltage; typical values 9397 750 14254 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 16 March 2005 14 of 22 Philips Semiconductors BF1208 Dual N-channel dual gate MOSFET 30 IG1 (A) 20 001aaa576 120 Vunw (dBV) 110 001aac198 (1) (2) (3) (4) 100 (5) 10 90 0 0 2 4 VG2-S (V) 6 80 0 20 40 60 gain reduction (dB) (1) VGG = 5.0 V. (2) VGG = 4.5 V. (3) VGG = 4.0 V. (4) VGG = 3.5 V. (5) VGG = 3.0 V. VDS(B) = 5 V; VDS(A) = VG1-S(A) = 0 V; Tj = 25 C; RG1 = 150 k (connected to VGG); see Figure 3. VDS(B) = 5 V; VGG = 5 V; VDS(A) = VG1-S(A) = 0 V; RG1 = 150 k (connected to VGG); fw = 50 MHz; funw = 60 MHz; Tamb = 25 C; see Figure 34. Fig 25. Amplifier B: gate1 current as a function of gate2 voltage; typical values Fig 26. Amplifier B: unwanted voltage for 1 % cross-modulation as a function of gain reduction; typical values 16 ID (mA) 12 001aac200 0 gain reduction (dB) 10 001aac199 20 8 30 4 40 50 0 1 2 3 VAGC (V) 4 0 0 10 20 30 40 50 gain reduction (dB) VDS(B) = 5 V; VGG = 5 V; VDS(A) = VG1-S(A) = 0 V; RG1 = 150 k (connected to VGG); f = 50 MHz; Tamb = 25 C; see Figure 34. VDS(B) = 5 V; VGG = 5 V; VDS(A) = VG1-S(A) = 0 V; RG1 = 150 k (connected to VGG); f = 50 MHz; Tamb = 25 C; see Figure 34. Fig 27. Amplifier B: gain reduction as a function of AGC voltage; typical values Fig 28. Amplifier B: drain current as a function of gain reduction; typical values 9397 750 14254 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 16 March 2005 15 of 22 Philips Semiconductors BF1208 Dual N-channel dual gate MOSFET 102 bis, gis (mS) 10 bis 1 gis 10-1 001aac570 102 001aac571 -102 |yfs| (mS) |yfs| fs (deg) 10 fs -10 10-2 10 102 f (MHz) 103 1 10 102 f (MHz) -1 103 VDS(B) = 5 V; VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V; ID(B) = 13 mA VDS(B) = 5 V; VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V; ID(B) = 13 mA Fig 29. Amplifier B: input admittance as a function of frequency; typical values 103 |yrs| (S) 102 rs |yrs| 001aac572 Fig 30. Amplifier B: forward transfer admittance and phase as a function of frequency; typical values 10 bos, gos (mS) 1 bos 001aac573 -103 rs (deg) -102 gos 10 -10 10-1 1 10 102 f (MHz) 103 -1 10-2 10 102 f (MHz) 103 VDS(B) = 5 V; VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V; ID(B) = 13 mA VDS(B) = 5 V; VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V; ID(B) = 13 mA Fig 31. Amplifier B: reverse transfer admittance and phase as a function of frequency; typical values Fig 32. Amplifier B: output admittance as a function of frequency; typical values 9397 750 14254 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 16 March 2005 16 of 22 Philips Semiconductors BF1208 Dual N-channel dual gate MOSFET 8.2.2 Scattering parameters for amplifier B Table 12: Scattering parameters for amplifier B VDS(B) = 5 V; VG2-S = 4 V; ID(B) = 13 mA; VDS(A) = 0 V; VG1-S(A) = 0 V; Tamb = 25 C; typical values. f (MHz) 50 100 200 300 400 500 600 700 800 900 1000 s11 Magnitude (ratio) 0.985 0.984 0.980 0.975 0.969 0.961 0.955 0.945 0.938 0.930 0.920 Angle (deg) -3.42 -6.96 s21 Magnitude (ratio) 3.33 3.31 Angle (deg) s12 Magnitude (ratio) Angle (deg) 87.55 83.45 82.84 82.01 79.73 77.91 76.31 73.76 71.58 69.18 67.54 s22 Magnitude (ratio) 0.988 0.988 0.987 0.986 0.984 0.982 0.980 0.977 0.974 0.971 0.967 Angle (deg) -1.60 -3.16 -6.31 -9.40 -12.46 -15.57 -18.62 -21.70 -24.76 -27.81 -30.86 176.41 0.0010 172.70 0.0020 165.59 0.0039 158.42 0.0054 151.34 0.0068 144.33 0.0085 137.54 0.0100 130.72 0.0115 123.98 0.0131 117.31 0.0145 110.39 0.0157 -13.51 3.27 -20.07 3.23 -26.61 3.19 -32.89 3.14 -39.19 3.07 -45.39 3.00 -51.39 2.93 -57.36 2.85 -63.10 2.77 8.2.3 Noise data for amplifier B Table 13: Noise data for amplifier B VDS(B) = 5 V; VG2-S = 4 V; ID(B) = 13 mA; VDS(A) = 0 V; VG1-S(A) = 0 V; Tamb = 25 C; typical values; unless otherwise specified. f (MHz) 400 800 NFmin (dB) 1.3 1.4 opt ratio 0.695 0.674 (deg) 13.11 32.77 0.694 0.674 rn () 9397 750 14254 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 16 March 2005 17 of 22 Philips Semiconductors BF1208 Dual N-channel dual gate MOSFET 9. Test information VAGC VDS(A) 5V 4.7 nF 10 k 4.7 nF L1 2.2 H G1A G2 G1B DA S DB 4.7 nF RGEN 50 Vi 50 4.7 nF BF1208 RL 50 4.7 nF 50 RG1 L2 2.2 H 4.7 nF VGG 0V VDS(B) 5V 001aac201 Fig 33. Cross-modulation test set-up for amplifier A VAGC VDS(A) 5V 4.7 nF 10 k 4.7 nF L1 2.2 H G1A G2 G1B DA S DB 4.7 nF 50 4.7 nF BF1208 4.7 nF RGEN 50 Vi 50 RG1 L2 2.2 H 4.7 nF RL 50 VGG 5V VDS(B) 5V 001aac202 Fig 34. Cross-modulation test set-up for amplifier B 9397 750 14254 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 16 March 2005 18 of 22 Philips Semiconductors BF1208 Dual N-channel dual gate MOSFET 10. Package outline Plastic surface mounted package; 6 leads SOT666 D A E X S YS HE 6 5 4 pin 1 index A 1 e1 e 2 bp 3 wMA Lp detail X c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 0.6 0.5 bp 0.27 0.17 c 0.18 0.08 D 1.7 1.5 E 1.3 1.1 e 1.0 e1 0.5 HE 1.7 1.5 Lp 0.3 0.1 w 0.1 y 0.1 OUTLINE VERSION SOT666 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 01-08-27 04-11-08 Fig 35. Package outline SOT666 9397 750 14254 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 16 March 2005 19 of 22 Philips Semiconductors BF1208 Dual N-channel dual gate MOSFET 11. Revision history Table 14: BF1208_1 Revision history Release date 20050316 Data sheet status Product data sheet Change notice Doc. number 9397 750 14254 Supersedes Document ID 9397 750 14254 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 16 March 2005 20 of 22 Philips Semiconductors BF1208 Dual N-channel dual gate MOSFET 12. Data sheet status Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). III Product data Production [1] [2] [3] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 13. Definitions Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 14. Disclaimers Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 15. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com 9397 750 14254 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 16 March 2005 21 of 22 Philips Semiconductors BF1208 Dual N-channel dual gate MOSFET 16. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 8.1.1 8.1.2 8.1.3 8.2 8.2.1 8.2.2 8.2.3 9 10 11 12 13 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Static characteristics. . . . . . . . . . . . . . . . . . . . . 4 Dynamic characteristics . . . . . . . . . . . . . . . . . . 5 Dynamic characteristics for amplifier A. . . . . . . 5 Graphics for amplifier A . . . . . . . . . . . . . . . . . . 6 Scattering parameters for amplifier A . . . . . . . 10 Noise data for amplifier A . . . . . . . . . . . . . . . . 10 Dynamic characteristics for amplifier B. . . . . . 11 Graphics for amplifier B . . . . . . . . . . . . . . . . . 12 Scattering parameters for amplifier B . . . . . . . 17 Noise data for amplifier B . . . . . . . . . . . . . . . . 17 Test information . . . . . . . . . . . . . . . . . . . . . . . . 18 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 19 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 20 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 21 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Contact information . . . . . . . . . . . . . . . . . . . . 21 (c) Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 16 March 2005 Document number: 9397 750 14254 Published in The Netherlands |
Price & Availability of BF1208
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |